PART |
Description |
Maker |
MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor MOTOROLA[Motorola, Inc]
|
AH277AZ4-CG1 AH277AZ4-AE1 AH277AZ4-BG1 |
MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, TO-94, SIP-4 MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, RECTANGULAR, THROUGH HOLE MOUNT ROHS COMPLIANT, TO-94, SIP-4, MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT
|
BCD Semiconductor Manufacturing, Ltd. BCD SEMICONDUCTOR MANUFACTURING LTD
|
SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
ESDA14V2-2BF ESDA14V2-2BF3 ESDA14V2-2BX |
Quad bidirectional Transi array for ESD protection
|
STMicroelectronics
|
BC264A BC264B BC264C BC264D BC264 |
N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS N Channel Junction Field Effect Transistors
|
NXP Semiconductors Philips Semiconductors
|
AH276Q-PG-B-A AH276Q-PG-B-B AH276Q-PG-B-C AH276Q-P |
COMPLEMENTARY OUTPUT HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, SIP-4 MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, SIP-4
|
Diodes Incorporated http:// Diodes, Inc.
|
2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba. TOSHIBA[Toshiba Semiconductor]
|
SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
SSM3K03FE |
100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
PTF10021 |
30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦,1.4-1.6 GHzGOLDMOS场效应晶体管 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|